JOSHI, G.; BALMUKUND RAHI, S. Analysis of Threshold Voltage of Biaxial Strained Silicon nMOSFET. Asian Journal of Engineering and Applied Technology, [S. l.], v. 1, n. 1, p. 31–35, 2012. DOI: 10.51983/ajeat-2012.1.1.2499. Disponível em: https://ajeat.com/index.php/ajeat/article/view/2499. Acesso em: 22 nov. 2024.